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智慧財產及商業法院103年度民專訴字第48號

關鍵資訊

  • 裁判案由
    侵害專利權有關財產權爭議等
  • 案件類型
    智財
  • 審判法院
    智慧財產及商業法院
  • 裁判日期
    106 年 07 月 05 日

  • 當事人
    Toshiba Memory Corporation

10348 Toshiba Memory Corporation  Michihito Hatsumi                                                    106 5 31 使2 4 NANDFlash Memory154717I238412 2 4 NAND Flash Memory 154717I238412 915 1 110 5 9 948 21111 122 NAND Flash Memory 104 10121 3 5 6 7 13151718A5U1GA31ATS- BC 2 A5U2GA31BTS-BC3 A5U4GA31ATS-BC4 1 3 5 6 7 13151718173-233 254 1 2 Toshiba Memory Corporation106 5 2 106 5 18106 5 31 1 2 3 5 91-104220-221 106 5 22102 254-255 106 5 2689-90 255 1 2 3 1 5 106 1 11136 5 使NAND Flash Memory 154717I238412 851 2 2 971 2 2 105 119 99104 621,340,443 621,90 4,344621,667,934 621,340,443 調4 96,770,24920,819,887503,750, 3072 99104 2611-99 24% 86149,121,706 9723447,365,118 99104 13% 2%15% 17% 17% 14% 105 119 4 13% 80,774,257972 3 242,322,771 3 G 調87調 99103 NAND Flash4NAND Flash375%10NAND Flash330% 75%30 % 30% 99103 46,800,000235 99103 2611 -1125%86 11,700,00032374,400,000 97231,123,200,000 99104 9%-42%-40%36% 36% 34 %105 119 5 100 101 DRAM88NAND Flash100 101 999%100 101 調7,614,000 32243,648,000 972 3 730,944,000 2 101 2 5 3233NAND Flash Memory 103 5 20NAND Flash Memory 34NAND Flash Memory 3 185 1011111 1011112 232 便100% 3 NAND Flash Memory NAND Flash Memory 便退NAND Flash Memory 便100% NAND Flash Memory1415192022242631101 994 NAND Flash13994 103 5 2034103 5 27994 994 197 1 103 5 20NAND Flash Memory 34NAND Flash961 3 調調2 184 185 4 22,189,847使 102 196 103527103 52721015272 101527 31932 2 調 99105531621,340,443 22,189,8473 3 2 5,842,955 6,906,752 1,428, 39734 ,178,104 3 229,966 115,325 106 6 2232 -37 3 621,340,443 600,094 101 5 279%退使103 5 20103 5 103 5 1.2. 101 4 1812 使 962 19274642865 93851 221 64379-384 wafer Die wafer NAND Flash Memory3 3116Maker Code92hJEDEC STANDARDStandard Manufacturer's IdentificationCode218 92Maker CodeNAND FlashMemoryA5U12A31ATS- BC 16171841NAND Flash Memory NAND Flash Memory JEDEC STANDARDStandard Manufacturer's Identification CodeMaker Code3 12NANDFlash IC2324NANDFlash ICNANDFlash IC 385-386 NAND Flash Memory 96971 2 105 4 15304-305 105 111065-66 99104 退621,340, 443退621, 904,344退621,667,934 退退 621,34 0, 443 3 4 100 104 105 7 223 621,340,443 96,770,24920,8 19,887 503,750, 30781.07 101 102 103 104 105 1 1 5 3148,563,547182,547,539 229,081,622 121,495,673 39,652,06299100 101 104 15% 17% 17% 14% 4 105 14% 99,822,173 使使282 1 1 345 1 222 2 使 3 Wafer Die Package 3 3 A5U1GA31ATS- BC A5U2GA31BT S- BC A5U4GA31ATS-BCProduct IDPart ID Product IDPart ID 使Product IDPart ID Mask; ask IDProduct IDPart ID 105 9 14調調3 3 105 5 26105 7 15333-334 105 7 2014105 9 20調3 105 9 261056105 12231 2 3 100 104 86-87 1 Workflow2 3 簿344 1 4 5 111 104 111 使調 3 282 1 1 345 1 222 2 99103 調87調G 19798,800 201624.4907097769910 410調105 1 20調調400 157- 158101 102 104 調949596調調調調 99103 NANDFlash 20102104調87204-207 235 4 NAND Flash3 75% 10NAND Flash3 30% 75% 30 %30 %10 13 100 106 6 2234100 100 99100 103 40,200,00099 104 9%-42%-40%36% 36% 34 %5 10 0101 DRAMNAND Flash100 101 88999%100 10 1調7,020,000 30.5214,110,000 2 972 3 10 11 3 2 3233NAND FlashMemory103 5 203 2 34103 5 106 6 2249調100 103 NAND FlashMemory103 調103 5 3 103 3 104 1540 3 106 1 11129 3 3 3 106 1 11130 3 103 104 36345 14174 15106 1 11129-130 3 使 1 VSG1VSG2VSG3滿VSG1>VSG3>VSG2VSG2(cut off) (turn-on) 3 5 6 1 1 NAND FLASH MEMORY 7 13使( 279-22) 1517181313 NAND Flash Memory 使使 退100% 106 1 4 384 使139 2 0.67320.33 376126 使384 139 523 523 139 使NAND FLASH MEMORY 59-60 106 5 2631NAND Flash Memory190 190 1 32使US0000000B2 US0000000B2 US0000000A3 2 106 5 10106 5 31106 5 263132196 2 3132調使貿使 185 1 99,822,173100,177, 8272 滿 102 1556 232 23734345101 1111101 11128 1 2 23 2 103 5 27101 5 27使197 1 721428101 6 4 19101 1019203 3 103 5 27101 5 27 使 961 3 9610 012213 961 3 使3 3 使3 1 1 6 91-95 5 107 22,189,847使退 961 2 3 971 2 2 1 103 6 4 1 106 1 11106 1 1299,822,173103 6 4 使3 3 79390 2 392 2         106    7     5      20         106    7     5