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in判決書

智慧財產及商業法院99年度民專訴字第59號

關鍵資訊

  • 裁判案由
    侵害專利權有關財產權爭議等
  • 案件類型
    智財
  • 審判法院
    智慧財產及商業法院
  • 裁判日期
    101 年 06 月 14 日

  • 當事人
    美商茂力科技股份有限公司(Monolithic Power Systems, Inc.)

9959   Monolithic Power Systems, Inc.                        10153 TA2154FR9758FR9706FP6340使I299935 使I299935 TA2154FR9706FP6340 994 23 100 5 26301 982259 調98709 使1 1 2 2 151 3 1 7 9 1 421 995 1 111 115 996 7 106 100 2 219598100 3 1 93 255 1 2 3 7 1.使TA2154I299935 2.使TA2154I299935 3.1,800,000 4.100 4 8 1 2 TA2154FR9758FR9706100 4 1912FP6340101 5 3 ()I299935 使調978 11114 122799TA21541 TA21541 ()797979 ()TA2154 1.1 1 FeaturesTA2154Wide Input Voltage調 Adjustable Input Voltage3 1 TA2154使Low-Side MOSFET High-Side MOSFET 2.2 4 Pin Function Description 2 VIN 2 Recommend Operating Conditions 4.75234 4 GND 2 VIN 4 GND 2 VIN 4 GND 3.3 2 3 TA2154VOUT2 VOUT0.925 204 4 GND VOUT4 GND VOUT4 GND 調4.4 2 3 TA2154C2C2VOUT4 GND 7 Output Capacitor SelectionC2VOUT4 GND 5.5 2 3 TA2154L1L1VOUT8 Output Inducer SelectionL1VOUT 6.6 3 1 TA2154FunctionalBlock Diagram TA2154High-Side MOSFET VIN SW2 3 TA2154TA2154SWL1L1SWHigh-Side MOSFETVIN L1 7.7 2 3 TA2154D1D1SWGND 1 TA2154High- Side MOSFET SWD1D1SWHigh-Side MOSFETGND 8.8 1 TA2154Low-Side MOSFET SWGND 2 3 TA2154TA2154SWD1GND D1D1D1MOSFET2 Electric Characteristic 6 10D1 9.9 1 6 Control LoopRSQ RS/QRSQ /QTA21541 D SWS GND G N-MOSFETVDS IDVDS Low-SideMOSFETI VDMOSFETV IRR V/I VDS 1/R R 2 3 VIN L1C2VOUTL1ILC2D1IL0 C2L1damping 10.TA2154 TA21541 TA2154 1 () 1.1 20044 2620044 2620044 261 1 URL 20067 101 1 1 6 1 1.3 5 2 2.1 3 1 5 4 9 5 5 2.1 4 1 1 1 1 4 1 4 1 2 3 1 1 3.1 4 1 body diode1 1 1 S23 1 4 November 2004 4 2004114 0 0 4 4.5 2 151 5 6 1 5 151 6 4 3133511 5 6 1 5 122 1615ONOFF 5 165 5 166 4 28236 386 6 385.181 4 RT9214November2004RT9214datasheet RT9214March 2011182 November 2004 20113 18November2004RT921493111822RT9214使RT92141 1 6.1 6 151B 6 116 106 SW1 OFF SW2 c L b SW1 OFF SW2 L 116 SW1 OFF SW2 ONILSW2 ON1 1 () 1.SWOFF 1 Low-Side MOSFET is on SWOFF Low-Side MOSFET RDS(ON) 8 (B) TA2154FR9706FR6340Low-Side MOSFET RDS(ON) 2. 2 使使250 TA2154FR6340250 使250 2 3 2 2 2 SWOFF 16Low-Side MOSFET is on IL1 Low -Side MOSFETVDS_LOW/IL1 Low-Side MOSFET RDS(ON) VDS_LOW IL1 RDS(ON) Low-Side MOSFET RDS(ON) 250 mA250 mA 2 2AOutputCurrent 250mA 250 mA 3.使使1 4 1.2 1.3 MOSFET S2 1.2 4.使使250 使使MAX1733/1734250 mAMAX1733/1734 () 1.TA2154西199720061016841 使TA2154I299935 使TA2154I299935 TA215420107 16TA2154TA2154 2. 使使使Competitor Cross ReferenceTA2154使使101 2 3. 1 56使使使使使使56使使使2 1 使56使 testing board 56使 4.TA2154TA2154TA2154TA2154TA2154 TA2154 994 167 16Techpower Step-down DC/DC converter TA2154TA2154999 23ProductsTA2154Technical SupportsSales Price and AvailabilityQuality Assurance Product scheduleMPMass Production TA2154TA2154TA2154使 TA2154 TA2154使9868TA2154TA2154TA2254PR9785 FR9706 48FR9706FR9706FR97064649TA2154FR9706FR9706FR9706101 2 FR9706853 FP6340 FP6340FP6340FP6340FP6340FP6340 TA2154使power supply154 2 56使TA215456 5. TA2154FR9706FP63401 185 273 material part 1 TA2154Low-Side MOSFET TA2154TA2154184 1 185 () TA2154FR9706FP6340ICBuck DC/DCBuck DC/DC32101 3 12,403,816995 1 991231999911 991231IC 608,423,000 995 1 9912608,423,000 ×8/12=4 05,615,333100 1 1 100 6 30100 IC319,199,000 100 7 1 101 3 31100 7 1 101 3 319 405,615, 333+319,199,000×9/14465,952,071 1,190,766,404 9 323 12,403 ,816 1,190,766,404/9/32×3 12,403,816851 2 TA2154FR9706FP634012, 403,816 37,211,448180 ()232 841 1.使TA2154FR9758FR9706FP6340I299 9352.使TA2154FR9758FR9706FP6340I299935 3.1,800,000 4. ()TA2154TA2154使799868 ()便154 2 便使TA2154使便使使使使 滿 使使使滿使使 ()TA21541 1.1 SW1 1 SW1 MOSFETMOSFETICMOSFET使IC 2.2 High-Side MOSFET RDS(ON)Low-Side MOSFET RDS(ON) 便1 150 1 10ONOFF 2 bootstrap High-Side MOSFETLow- Side MOSFETLow-Side MOSFET High-Side MOSFETHigh-Side MOSFETLow-Side MOSFET Low-Side MOSFET Low-Side MOSFET 1 3.Rds(ON) VDS IDMOSFET(Recitifier)- (VGS) ONOFF VGS VDS ID IDVDS VDS-IDMOSFET2 VDS IDIDIDVDS 2 MOSFETVGS VDS IDMOSFET使使IDMOSFET1 4.MOSFET使MOSFET(Recitifier)(ON)(OFF) (G)-(S) (VGS) (G) 便(ON)(OFF) TA2154(S2)(G) (S2)(ON)(OFF) VDS (D) (S) TA2154(D)-(S) (VDS) N-MOSFETVDS ID VDS 1/R TA2154VDS (R) 1 934 262.4 Switching Waveformof Lower MOSFET 便VDS IDTA2154S2 Gate Signal(ON)(OFF) 1 15(ON)(OFF) TA2154S2 Gate Signal(ON)(OFF) 15TA2154ID(RMOS)VGS VDS VDS Low-Side MOSFET (RMOS)(VGS)VDS MOSFETVDS 便TA2154 () 1.1 D1D1便1 250mA D126VoutD1Vout21VoutD1 2.D1D1D1250 mAVoutD1使250mA D1使D11 D11 使2AD1MOSFETD1D1MOSFET 3.1 L L 便1 L RxL Vin 12V Rx2 (ohm) 3 ( ohm)250 (mA)2 (A) VoutVoutVout1 L D11 4.1 L C D1L C D1(pulse) (clock) (frequency generator) L C D11 () 1.1 4 1 6 1 4 9312281 Huy Nguyen934 26Design, Analysis and Implementation ofMultiphase SynchronousBuck DC-DC Converter for Transportable Processor2 84Power-SwitchingConverters ISBN:0000000 000000 3 916,396,250 4 9311RT9214Synchronous Buck DC-DC Controller 6 1 1 6 1 6 1 1 ETD ETD 4 6 便ETD ETD 便1 15-220044 26Date of Defense ETD 20045 3 URN etd000000000ETD 6 20046 14便1 ETD 1 1 20046 14200412281 6 4 5 4 1 5 6 4 RD5 SW2 1 1 6 1 1 6 1 6 1 1.3 (Vin) (Vo)(Load)1.3 VO(Co)(Load)(Vo)(Co)(Vo)(L) (Vo)S1(Vin) (L) S2(L) (11)4 1 1.3 5 1 4 1.3 MOSFET S2 S1S2S1S21. 31 1.3 S1(ON)S2( OFF)S2(OFF) S2S1(OFF) S2(ON)S21 6 6 1 6 1 E G E OFF 0 G ON-OFFG - 0 MOSFET使MOSFET1 1 1 E G E OFF G ONG (ON)0 0 1 G (ON)0 0 1 3 1 使SWONSW OFF 31EGE ONG OFF G E OFF G OFF-ON-OFFG - - 3 1 3 1 3 1 E G E OFF 0 G ON-OFFG - 3 E G E OFF G ONG (ON)0 0 3 G (ON)0 0 1 2 3 1 6 1 6 2 2.1 (VS)(VO)(RL)(C)(VO)(L)(VO)SW(QS)(VS)(L) (Dfw)SW(QS) (VS)(VO)3 1 (A3)(B3)(D6)(B3)SW(E3)(A3)(D3)SW(G3)(D3) 2 2.1 (Dfw) 3 1 SW(G3)2 2.1 (C) 3 1 (B3)(11)6 5 6 3 1 MOSFETSW(G3)3 1 SW(E3)(ON)SW(G3)(OFF) SW(G3)(OFF) SW(G3)SW (E3) (OFF) SW(G3)(ON) SW(G3)2 3 6 6 1 6 4 1 6 4 1 6 1 6 4 9 (VIN) (VOUT)(RL)(COUT)(VOUT)(L) (VOUT)S1(VIN) (L)S2(L)4 9 5 6 Vg1 S1Vg2 S24 S1(ON)S2(OFF) S2(OFF) S2S1(OFF) S2(ON)S2 4 6 6 1 6 4 1 使SWONSWOFF 5 1 使SWONSW OFF 5 3 5 2 131613ON16OFF 1613OFF 16OFF-ON-OFF16- - 16OFF 16ON16OFF 5 1 使SWONSWOFF 5 1 240 OFF ON5 5 1 使SWONSWOFF 6 1 使SWONSW OFF 6 E G 5 6 1 使SWONSWOFF 0 MOSFET使MOSFET6 1 2.TA2154TA21541 1 5 6 9312285 915125766 885,905,370 56 使5 5 JP00000000000 US6,472,854 5 175 151717155 155 185 1518rectifying diode 15 rectifying18 15rectifying diode5 156 1 5 2 6 1 51 TA21545 1 High-Side MOSFETLow-Side MOSFET Low-Side MOSFET High-Side MOSFETHigh-Side MOSFETLow-Side MOSFET Low-Side MOSFET MOSFET TA21545 2 (A5)(B5)(C5)(B5)(D5)(B5)1 SW(E5)(A5)(D5)(F5)1 SW(E5)(D5)2 SW(G5)(F5) 5 5 1 1 13(ON)2 16(OFF) 2 16(OFF) 2 161 13(OFF) 2 16(ON)2 16TA21545 1 TA21541 1 5 TA21546 TA2154S1High-Side MOSFETS2Low-Side MOSFET S2Low-Side MOSFET S1High-Side MOSFETS1High- Side MOSFET S2Low-Side MOSFET S2Low-Side MOSFET MOSFET6 1 (A6)(B6)(C6)(B6)(D6)(B6)SW(E6)(A6)(D6)(F6)SW(E 6) SW(G6)(F6)4244使36(ON)38(OFF) 36(OFF) 38(ON)6 1 36(ON)38(OFF) 38(OFF) 3836(OFF) 38(ON)38TA21546 1 TA21541 1 6 3.1 26 Vin ILCo使VoutILSWD 使ILILILD ILILD SW使Vin ILVoutSWD 調ILILD 使D 便D 使D 6 (ON)(OFF) 1CSWILD (off) SWSWILRDSW 1/SW2Id 1 262 3 SW( 1CVI) IL( D D ) SWILRDSW1/SW2 IdSWRDSW1/SW2 Id1 SWONSWOFF SWSWILIL1 IL182 263 1 1 263 () 1. (R) = (V) 2317 (R) (V) (I) (noise) (R) R= noise+V /Inoise 1 241 (V) (noise) ( R)(1) V R=noise /Inoise ( 2)(R) (V) (noise) (R) (1) V (1) 241 (V) (noise) (R) (1) noise R=V /IV 3 (R) (R) ( -10 241 ) 3 (R)(-10) -10=V/I 24( ) ( ) -3303 -10=V/I (noise=0.1&0.0001)(noise+V )/I( noise)(V) (noise)/I (noise+V)/I -10 (noise) (V) V/I (noise+V)/I 25 ( ) 2.D1SWSW TA2154L1(IL1)TA2154SW(I1)D1(ID1) IL1= I1+ ID1(layout)SWSWL1D1L1D1L1(IL1) D1(ID1) I1= IL1- ID1TA2154SW(I1)19212219D1SW2122D1L1(IL1) D1(ID1) SW(I1)2122SW(I1) 3.TA2154FR9706OFF TA2154-221232122SW(I1)23TA2154-2OFF FR97063445 4.1 D1D1便1 1424354657TA2154FR9706FP6340D1TA2154FR9706D1() 185 64643664232 4 (ON)(OFF) (ON)(OFF) 便A G2Vin VoutC2L1MOSFETD1MOSFET229 S1S2(ON)(OFF) 1 5 6 TA2154FR9758FR9884FR9706FP6340FR970660FR9706TA2154FP6340 978 11114 1227931228995 1 TA2154TA2154FR9706FP63402 7 8 9 8 TA215499156 157 TA215416FR9706485269100 118 FP634053TA2154FR9706FP6340TA2154FR97581 16196 1 2 9911241 147 4 7 1 9912157879202 US7,230,838B2 3515便101 5 3 9911121 調161 調 277 TA2154FR9706100 4 25TA2154FR97062 -1TA2154FR9706-27 9 1315TA215499298 9 3 997 16TA2154Jun-2009986 TA2154FR9706991299625 49101 5966FR9706FP6340100 4 100 153 54FP634055101 5966FP6340FP63402007FP6340100 4 27283 100 3 14FP63402007FP6340994 28995 1 TA2154FR97583646FR9758FR9884FR9884TA2154TA2154FR9758FR9758FR9884100 2 237879TA2154FR9758 TA2154FR9758FR9706FP63401 使1 185 2 使1 1 1 1 262 3 1 4 5 6 231.1 2.1 3.4. 941228296 931228使調1 1.使 調 SW SWSW使 SWON SWOFF 1 4 103 RD 使a.SW1 ONRDb.D OFF RD1 2 RDN L RDRD12RD SW1 SW1 2 RDRD使4 RD1 103 10116 調1 ILSWILSW1 262 3 1 Huy Nguyen20044 26Design,Analysis and Implementation of Multiphase Synchronous Buck DC-DC Converter for Transportable Processor 1 20067 101 15-220044 26ETD 5 3 ETD 15-16 20046 14便1 ETD 2 84Power- Switching Converter 14153 20025 28 6396250 CONTROL METHOD TO REDUCE BODY DIODE CONDUCTION AND REVERSE RECOVERY LOSSES4 9311RT9214Synchronous Buck DC-DC Controller 5 91121 901075306 19995 185905370 PROGRAMMABLE STEP DOWN DC-DC CONVERTER CONTROLLER 1 1.3 Vin VoLoad1.3 VoCoLoadVoCoVoL VoS1 Vin L S2L 1 1 1 1 1 SW1 使6 SS1 1 6 1 1 4 2 1.3 S2S1S21.3 S1S2穿S2body diodeS2S2S2RDSON 1 S26 SS1 6 使1 1 6 1 1 1 1 使SWONSWOFF 1 S21 1 2 2.1 VsVoRLC VoL VoSWQsVsL Dfw SWQsVsVo2 3 1 A3B3D6B3SWE3A3SWG3D33 1 2 3 2 1 1 SW使3 G36 SS3 6 使6 SS2 3 1 6 1 3 3 SWVOUT3 3 6 181 使SWONSWOFF 2 3 G32 3 1 4 調DC-DC 9 VIN VOUTRLCOUTVOUTS1VIN L S2L 4 1 4 4 1 SW1 使4 S26 SS4 6 使4 1 6 1 4 11S21 使SWONSWOFF 4 S24 1 5 2 A5B5D5B51 SWE5A5D5F51 SWE5D52 SWG5F55 4 5 6 DC-DC 1 A6B6C6B5D6B6SWE6A6D6F6SWE6SWG6F66 1 5 6 5 6 1 SW1 使5 2 SWG56 SW5 6 1 使5 6 1 5 4 18151214125 17181 2 1316ON3 1 2 1316ONOFF tDETtDET1 2 1316on5 3 5 2 13161 2 1316ON穿5 6 5 6 2 1 4 - 1 使SWONSWOFF 5 6 2 SW5 6 1 1 3 4 5 6 1 使SWONSWOFF 1 3 4 5 6 S1S2穿bodydiode body diodeRDS ONbody diodebodydiode 1 3 4 5 6 1 1.3 3 1 E G E OFF 0 G ON-OFFG - 3 OFF ON4 5 5 17181 2 1316ON3 1 2 1316ONOFF tDETtDET1 2 1316on5 3 5 2 13161 2 1316ON穿13SWON16OFF 1613OFF 16OFF-ON-OFF16- - 16OFF 16ON16OFF 5 3 ONOFF 166 E G 5 E OFF G OFF-ON-OFFG - - G OFF G ONG OFF 6 G 1 1 8 1.使2.3.調4.5.6.SW7.SW8.SWTA2154FR9706FP63401 TA2154FR9706FP63408 1 7 8 TA2154FR97062 FP63404 ElectricalCharacteristicLow-Side MOSFET RDS(ON) 10Ω1 8 TA2154FR9706FP63408 B 14B 21B 28B 35B SWLow-Side MOSFET RDS ONMOSFETRDS ONVGS VDS TA2154FR9706FP63 40 Low-Side MOSFET RDSON(noise) (R) R=noise+V I noise 16VDS IDS RDS ONRDS ONVGS RDS ONTA2154FR9706FP6340 Low- Side MOSFET RDSON TA2154FR9706FP63409 Block Diagram TA2154 FR9706FP6340 TA2154FR9706FP6340TA 2154 FR9706FP6340TA2154FR9706FP6340TA2154FR9706Asynchronous Buck DCDC Converter TA2154AsynchronousBuck DC DC Converter8 162 FR9706Async. Buck Converter 48MOS MOS BuckNMOSdiode TA2154FR9706FP63 40 182532TA2154FR9706250mA 38FP6340250mA 7 MAX1733/1734250mA 7 11使Low-Voltage 2.7V5.5VTA2154FR97062A4.75V 23V MAX1733/1734TA2154FR9706250mA MAX1733/1734TA2154FR9706TA2154FR9706TA2154FR9706 使561 使561 使561 貿561 使TA2154FR9706FP63401 1 7 TA2154FR9706FP63401 8 1 Absolute Maximum Ratins 使 Recommended Opera- ting Condition Electrical Characteri- sticsFR9706FP6340 Typical Performance Curves69531 使1 TA2154FR97 58 TA2154FR9758FR9706 FP63401 TA2154FR9758FR9706FP63401 185 101 720 使921593185 2 TA2154FR9758FR9706FP63401 FR9706FP6340使1 1 FR9706FP6340 185 使991207185 2 981790使79使7 113 4 使1 841 184 1 185 2 79232 193150216 1 222 872 973 851 222 2 使1 99981231100 996 306162995 1 100 6 30IC724,814,333 99IC608,423,000 61388 12995 1 12318 405, 615,333100 1 1 6 30319,199,000 6235100 7 1 3 32FR970632180 180 180 841 3 使1 使I299935 1 TA2154FR9706FP6340TA2154FR9758FR9706FP6340TA2154FR9758FR9706FP6340使 I299935 1 TA2154FR9706FP6340 1 79395         101    6     14     20         101    6     22