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臺灣新竹地方法院年度重訴字第77、79號

關鍵資訊

  • 裁判案由
    損害賠償
  • 案件類型
    民事
  • 審判法院
    臺灣新竹地方法院
  • 裁判日期
    103 年 01 月 29 日

    100 7779                            100 77100 79103 1 20 EM985002EM95139 100 77 97974 1700000000005 1400000000008 22 0000 000000 6,360 9710971112982,111 434,555 997 2661434,555 () 57151-152657309-320 1657153-154 7 2 ICICICICIC 97141-152 6 6 Wafer EM985002B EM985002C EM95128QEM985004A EM985013A EM985021A EM985016B IC999 20滿 ()2,087EM985002 23EM985002EM9850022,087 ICIdd Idd IC IC Wafer Acceptance Test WAT 5 WAT Chip ProbingCP CPICICICICFinal TestFTIC ICWATCP FT FTICIC 102 4 3 452.IDD IC使IC5050IC16ICICICFTIC OISFIdd IC 45 substrate defectIC454.1.2.4 Conclusions 1 1 good diebad die stacking fault defect 2 substrate defectsubstrate defectOxidation induced stacking faultOISFOISFsubstrate defectIdd OISFICIdd 4 退24ICOISF3 4.1.2.4Conclusi ons2Idd good dieOISFIdd 5 退24OISFIdd 5 OISFOISFIdd Idd OISFIdd 7 Wafer Map 20CPCPIdd CPCPCP IC 1 WAT CPFTIC30ICWAT 5 WAT 0.8um HVCMOS 5V/18V2P2MPsub-Design Rule 12WAT WAT WAT1024 3 45996 29WAT 5 20102 9 WAT 使Design rule WAT WAT 10WAT 100.1 20088 27使100.1 IC 799910282342000 CPFT34259 IC81.57 34259 ÷42000 81.57 18 .43 使1018.43 CPFT81.57 IC100.1 34259 IC使100.1 23使100.1 IC WAT WAT 42000 120 245 3 60使60100.1 使IC使IC使 CPFTCPFTICIdd ICIdd IC WAT WAT CP16 burn in FT 20 FT IC FT1Final Test 1FT2Final Test 2FT3Final Test 3FT1FT2Burn In使IC 21final TestFT IC FT 1 Burn In OvenBurn In 使 IC 132116IC 1. circuit design2.wafer process3.wafer probe4. chip assembly 5.Burn-in burn-in Burn-inburn-in 使 Burn-in ICburn inFTburn in IC 100 7 26 3561 FT IC調2009 625EC5575 Idd aging fail 24EC5575Idd agingfail1 Idd24 ACPIdd 5mA<IDD<13.8mA EC5575 Iddaging fail2 3 FT Idd TestIdd CPFT CPFTIdd 3 ICIdd 21penal 13 3 IC120 54ICIC13鹿3 120 54 WAT WAT BV_CGOX/N W BV_C GOX/NW EM985002C WAT 2007124 22EM985002C WAT 0.8um HVCMOS 5V/18V 2P2M Psub-Design Rule 000-000-000 ver.1012WAT PIP with ONOPlease add the test-key for CapacitortestPIP with ONO structureat WAT checking BV_CGOX/NWEM985002C WAT BV_CGOX/NW996 295 Idd BV_CGOX/NWBV_CGOX/NWWAT BV_CGOX/NW2007200823WAT BV_C GOX/NW BV_CGOX/NW 200719B6914L6824120 WAT 5 ; 24×5 120 76BV_CGOX/NW 120 63.33 B7926P12B0000000.1BV_CGOX/NWBV_CGOX/NWIdd WATBV_CGOX/NW ICWAT BV_CGOX/NWIdd BV_CGOX/NWWAT WAT 23226 978 272320084 17000000000000101200231 8 001023226 2420084 17000000000000101200242424 退00000000000010240000000000000000000020160000000000242 1 00000000000000000000 987 2087EM985002C 172087EM985002C EM985002C EM985002C 2,087 EM985002427,835 ()24EM985002 235 367 4 997 2661LGP6609C-0026,720 () 434,555 ()24EM985002 951966941860981194120 921131951966 ICICICICIC ICICEM985002EM95128 153 IC 92987 IC976 9 995 190000000 976 9 8 220000000057194 廿 使9556 ICIC IC8-9 4.2.100 79廿 EM98500224 ()2,087EM985002 23EM985002EM9850022,087 EM985002 23EM9850022,087 2262227 1 23EM9850029 132,087 0.1 10 使使使 0.110 Reliability Assurance Process reliability qualifi-cation, monitoring, & corrective action plan follow upWorldwide customer reliability spec 1015.3.6 IC0.1 t0.1滿F t0.1= 0.001 ICt0.1IC10ICt0.110 years100.001 ICICReliability inSemiconductor IC Products EM9850029 13EM985002 9782723 986 21Panel 13100 779 13IC 9782723EM985002 987 3 E-CMOS987 100 77 EM985002WAT 3541951296 WAT ICWAT CPFTWAT CPFTICWAT ICWAT WAT IC1 使2 125 1 使5 6 使 使使 354 1 使2 12 9 139 100 13 24EM985002CPWAT BV_CGOX/NWB0000000.10 BV_CGOX/NWB0000000.10 廿WAT 2641226 2 264 264 777 9493使 46,922,080495 227 2,087 2,087 35949494235299170 23359 494 退227 971000 23EM985002 4.1.2.4 substrate defectsubstrate defect poor process to induceEPISILsubstrate substr-ate defect poor process3 H2O2defectpoor pro-cess Timothy YangChauching Huang 3 EM985002 227495971000871480 9782723 使100 1 使972693232,087 2,087 2,087 2,087 2,087 退EM9850022,087 使2,087 ()24EM985002 264124EM95139 7 24 退75534 使24 () ()IC9298 ()974 1700000000005 1400000000008 2200000000006,360 971097111298978-131 14-17 2 ()2,111 2,087 EM98500224EM95139 9718-23 3 162-163 ()5 0.8um HVCMOS5V/18V2P2MPsub-Design RuleWafer Acceptance Test WAT (PIP with ONO 3 BV_CGOX/NWWAT 7739-42 22 ()978 27B0000000.124EM985002974 17000000000010120024WAT 23CPCh ip Probing CPICFTFinal TestFT985 ICIC9742-47 ()978 2723986 17120 IC10002154Panel 300 13PanelRA 9756-58 77168 ()98624Customer Complaint Report9759-138 4.1.2samplede-layer B0000000.1/ECMOSgood diebad die stack-ing fault defect2substrate defectsubstratedefectOxidation induced stacking faultOISF9763 4.1.4.2B2008.07.012009.06.25WAT B0000000.1/ECMOSBV_CGOX/NW0 9766()98625EC5575 Idd aging fail7774-78 24 AUOEC5575-HFT37HW02VG 6/11/T315HW02V401 6/18AUO 2Hrs55C,Vdd=15.6V IDD OCP IC1 2 FAsubstrate defectGate Oxide qualityRC clamp circuit MOS NMOSOn stateICIdd leakage Gate Oxide processWafer DefectGate OxideFunction work substrate defectStress ()988 123 H2O2defect97139 ()EM9850022,087 427,835 EM95139 246,720 434,555 97974 1700000000005 1400000000008 2200000000006,360 9710971112982,111 434,555 997 2661434,555 978 2723EM98500246,922,080495 227 2,087 2,087 24EM95139 使2,087 EM985002427,835 23EM9850022,087 EM98500224EM95139 6,720 ()941860891904使 ICICICICIC Reliability in Semiconductor IC ProductsIC1.circuit design2.wafer process 3.wafer probe 4.chip assembly ..5.Burn-in IC便使9777ICICICIC3 9 77215 IC 77227-233 IC9298 92986 976 9 2,000 9754-55 995 1900000000978 2200000000971813976 9 978 22000000002,000 346 1 490 1 491 59159099170 5 0.8umHVCMOS5V/18V2P2MPsub-Design Rule WAT ( ) 3 WAT ()23EM9850022,087 EM9850022,087 2,087 EM985002427,835 23EM985002 23EM985002Idd 986 17( ) 986 25EC5575 IDD aging fail ( ) EC5575IDD aging failAUO Idd 77210 978 2723EM9850025 4.1.2.4 substrate defectsub-strate defect poor process to induceEPISILsubstrate substrate defectpoor pro- cess9763988 123 H2O2defect97139 調調OISFCOGOX 97139 139 OISFBV_CGOX/NW77162 163 3 H2O2BV-CGOX failOISF3 H2O2defect97140 E-mailH2O2defect" " 3 H2O2defect97139 退ICOISFBV_C GOX/NW 77166 OISF 978 27B0000000.124IC 986 244.1.2 (1) samplede-layerB0000000.1/ECMOSgooddie bad diestacking fault defect(2) substrate defectsubstrate defectOxidation induc-ed stacking fault 9763OISFIDD 退good diebad die de-layerstacking fault defect substrate defectsubstrate defectOISFOISFIDD OISFOISFOISFstacking fault defect 77165 Idd ICOISFOISFIdd OISFIDD 77209 4.1.4.2B2008.07.012009.06.25WAT B0000000.1/ECMOSBV_CGOX/NW0 9766WAT OISFBV_CGOX/NWOISFBV_CGOX/NWparticleOISFOISFBV_CGOX/NW0 BV_CGOX/NW77165 166 BV _CGO X/NW0 IDD BV_C GOX/NW 滿ICICWAT WAT test keyWAT TEG 5 TEG ICWAT 77209 212 217 WAT WAT WAT BV_CGOX/NW退OISFOISFIDD IDD 77165-166 退de-layerIDD Idd 77210-211 ICCPFT使ICEOSelectric overstress使IC 使使ICIC ICCoefficient ofThermal Expansion ICIC IC ICICICN NMOSP PMOSthreshold volt- age ICIdd IC 23EM985002WAT CPICFTIC2 1 Idd 300 13IC1,000 21() ICFTICICIC使ICIC9779-80 1623EM985002IC IC23EM985002 77202-206 ICOEM-Original Equipment Manufacturer ICICICICIC使ICIC OEM Wafer ICICWAT wafer acceptance test IC ICCPcircuit probing ICFinal Test ICIC使ICICICICICIC ICIC IC WAT WAT IC使ICCP退 IC ICCPCPICICICFTICCPFTICFTICICICICICFT使FTIC IC ICIC 使 ICICICIC使WAT ICFTICICIC使ICICICFTIC使使IC 77208-217 ICICgood diegross die ICCPFTEC5575 Reliability Report 7797-106IC使10IC10IC使1-2 CPFTIddQIC77214 Idd 77208 CPFTIDDQIdd ICICCPFTIDDQIdd Idd 77209 WAT CPFTIDDQWAT 5 IDDQCPFTIDDQIDD 77212 CPFTEC5575Idd dataIdd (oxide leakage) FTICsection377212 section 3 2009625EC5575 Idd aging failEC5575ICEC5575 a.2Hrs55C Vdd 15.6V Idd OCP IC1 1 ICId dCPFTIdd Idd Idd IddQIdd ICBurn-in Idd IC使IC b.2 FTBIN3 Idd Test Vdd 8VVss -8V Vdd 15.6V FTIdd TestEC5575使VDD 6.5V18V 使18V c.使IC使ICGuardband IC10EC5575VDD 6.5V18V 使18VFTBIN3 Idd TestVdd 9VVss -9V 9V-(-9V)18V IC18V 10Guardband Vdd 9.9VVss -9.9V 使19.8V 使IC2FTBIN3 Idd TestVdd 8VVss -8V 16V ICVdd 15.6V Guardband 1017.16V15.6V ×110 17.16VFT IC使16V FT EC5575IC77204-205 IDDQIdd fault coverageIC0.1 10IC10CPFTICIC77213 IC100.1 使ICICIC10ICCPICIC77213 100.1 ICReliability in Semi conductor IC Products0.1 t0.1滿F(t0.1 )= 0.001 ICt0.1IC 10IC t0.110years 100.001 IC9781-82 145795 IC100.1 1077895879209 100.1 IC0.1 10 100.1 IC ICICICIC使使ICICmean lifetime median lifetime ICt0.1IC10 ICt0.1 10ye ars10 0.0019780-8110 0.1IC IC 10EC5575 Reliability Report 7797-106IC使10IC10ICIC10CPFTICICIC100.1 使ICICIC10IC100.1 5 0.8um HVCMOS5V/18V2P2MPsub-Design RuleWAT 3 () 2342,000CPFT34,259IC57165 EM98500224WAT 42000 120 24 5 3 603/5 24EM985002IC81.57 34,259/42,000 18.43 CPFT使100.1 7771201 使77203 77206 使77206 102 5 29123 IC7771201 稿ICICICICCPFTICIC 24EM985002CPFT IC使使使IC使IC使IC使使使ICIC使使burn-in burn-in burn-in burn-in 使IC使使IC9783-8478 CPFT使1-2 CPFTIddQICCPFTIDDQIdd ICICWAT CPFTIDDQWAT 5 IC10CPFTICICIC10ICCPICIC ICCPFTIDDQIdd ICICWAT WAT 5 77217 WATTEGTEG ICWAT WAT WAT 24EM985002CPFTWAT CPFTIDDQIdd Idd CPFTIDDQIDD dataIdd oxide leakage FTIC 2 FTBIN3Idd TestVdd 8VVss -8V Vdd 15.6V FTIdd TestEC5575使VDD 6.5V18V 使18V 7774-78 EC5575Idd aging fail2 FTBIN3 Idd Test Vdd 8VVss -8V 16V ICVdd 15.6V Guardband 1017.16V15.6V ×110 17.16VFT IC使16V FTEC5575IC77204-205 356 1 2 978 2724EM985002( ) 24EM985002ICEC5575Idd aging fail2Hrs55C Vdd 15.6V Idd OCP IC1 1 ICIdd 77204 356 1 2 24EM985002 100.1 ICIC24EM985002CPFT23EM985002退24EM985002 使100 1 貿使502 2 503 使494 495 2 使使使102 894 使 23EM9850022,087 IC23EM9850022,087 2,087 979710()() 使359 494 227 256 991027EM9850022,087 2,087 EM985002 使使使511 99818 () 2,087 EM985002 23EM985002IC23EM9850022,087 2,087 EM985002427,835 225 1 75534 EM9850022,087 使 ()24EM95139 6,720 235 872559 997 2661LGP6609C-0026,720 24使24 978 220000000000EM95139C002 242008102497139711121.EM95139C-002 24PCS1800PO2008/8-10 2.2008/12 NT900 NT900 20093.IC20094.971797122609Q2m20 -30 09Q4m70 09Q420092009 BP Forecast9714EM95139C24Jun' 2009 986 9715995 139719995 199718 997 26615 2,111 EM95139C24EM9850022,087 2,111 9720-23 24EC557597162- 163971112NT900 20092009 BP Forecast986 98995 13EM95139C2477191 235 225 1 75534 235 761461使235 EM95139C24使 24EM95139 ()229 2 233 1 IC23EM9850022,087 2,087 EM985002427,835 EM95139 2424EM95139 6,720 434,555 427,835 6,720 999 305 100 79 255 1 3 24,469,0805 998 2 46,922,08024,469,08022,453,000998 2 5 ()ICIC使IC92使976 9 2,000 便IC調9-12978 27EC5575-HF EM985002EC5575-HF EM985002985 986 ()西西7,432,103 1,095,532 10,827,1747,480,064 232,589.083,347,110 104,076.7819,354,8093,437,764 使退1,676,507 987 3 使EC5575-HF 987 996 17,390,000980.06275,145,000 979 ()981231EC2648EM95128 923 EC8009EM9E8009964 EC5431EC5461EM985016968 EC5565EM985003947 9 12EC2648EC8009 EC5431 EC5461EC556597991 6 5, 063,000 ()46,922,080:19,354,8093,437,7641,676,50717,390,0005,063,000 46,922,08024,469,08022,453,0005 ()19,354,809 WAT WAT WAT IC 493 1 96207096227449 51 373 354 1 359 354 227 356 9548Idd Idd 100 7 262 227 10 ()3,437,764 Idd 退1111 50 5190819 52 ()1,676,507 ICIC502 ICIC ()17,390,000 931225 20082009972 3 20092,111 2,087 EM985002 ()5,063,000 999 20 8 ) 2009IC 2008 1520091231166000ECOMS Epsil 調 978 2724EM98500219,354,8093,437,764 1,676,507 17,390,0005,063,000 46,922,08024EM985002使981231 24EM985002CPFTICIdd 使使981231 ()100 77() ()23EM985002IC23EM985002100 77() ()CPFTICIdd 23EM985002使 356 1 2 356 2 3 356 356 使92336 24EM985002CPFT100 77()24EM985002WAT 退ICIC24EM98500224EM985002使 ()23EM985002使()9812315,063,000 使9 12 450 2 478 488 2 549 1 102 2243使 ()23EM985002IC23EM985002CPFTICIdd 使23EM985002使19,354,8093,437,764 1,676,507 17,390,0009812315,063,000 46,922,08024,469,08022,453,0005 78390 2 392 103 1 29 20 103 1 29