lawpalyer logo
in判決書

臺灣士林地方法院107年度聲判字第135號

關鍵資訊

  • 裁判案由
    聲請交付審判
  • 案件類型
    刑事
  • 審判法院
    臺灣士林地方法院
  • 裁判日期
    108 年 02 月 27 日

      107135                               姿 107 9 30107 347 106 15771 2 10調258 1 1 258 3 2 3 姿107 8 29106 15771 107 9 30107 347 調106 15771 107 347 107 1016107 1024調 131 1 1 2 4 1.使使HY11P HY11P52BHY11P52B使調使 2.10使102 1 30 3.100 4.HY11P52BHY11P52B使104 HY11P52BHY11P52B使 317 1.調 2.SRAM CELL Google1 3.IC2-3 ICIC 4.ICIC使FS98031BFS98031BHY11P52B調Google調Google調 5.HY11P52BSRAMSRAM IP HY11P52BSRAMcellData Path Address PathWrite and Read ControlSRAM IP HY11P52BSRAM IP HY11P52BSRAM IP 仿IC 6.使調 ICICICIC4 107 10222 OTP SRAMSRAMSRAM2 使 157 1 1 1.157 1 1 962 1 7 157 2.調 1.IC調7 2.ICIC使 3.RD調 Google使Google258 1 1 258 1 258 3 3 調調260 滿調調調260 使使251 1 258 3 2 13111 2 4 1 252 8 131 134 102 1 3010200017761 131 134 102 2 1 131 使 使HY11OTP HY11P52B2010HY11P52BHY11P 20105 HY11P52BDS-HY11P52_TC .pdfAPD-ICE003_TC .pdfHY11P52B20105 105 45759 179 -180104 100 HY11P 5617967 9 使使7 HY11P 99100 131 使102 1 30調967 972 ICHY11P52B995 2 SRAMIP5 8 180-181 HY11P52B106 15771 使7 HY11P 106 15771 68使107 347 12-13 使使HY11P52BHY11P52B104 HY11P52B使 317 157 1 1 154 2 使調30816 521300 317 1.HY11P52BSRAM CELL DATA PATH ADDRESS PATHWRITE AND READ CONTR OL FS98031BSRAMOTP After comparing the function blocks and i/o pins of IC-Fortune with those of HY11P52B ,the hierarchical architectures R1 to R5 of IC-Fortune and HY11P52B 128byte SRAM reveal a high degree of similarity 14185 2. FS98031BSRAM CELL SRAM CELL 使2 CMOSComplementary Metal-Oxide-Semiconductor INVERTERS 2 MOSFETMetal-Oxide-Semiconductor Field-Effect Transistor 17SRAM CELL SRAM CELL 使SRAM CELL 1 343-347 SRAMcdFS98031BHY11P52BMOSFETPRSET 18SRAM cd 2/2 FS98031B1 CMOSFET 2 MOSFET使HY11P52B2 MOSFET1920SRAM pr HY11P52BFS98031B1 CMOSFET 1 CMOSFET MOSFET21DATA PATH SRAMio_w1/2 FS98031B3 NOT GATEtg2 HY11P52BNAND GATE NOT GATE1 2324SRAM io_w 2/2 FS98031BHY11P52B8 20MOSFET2425SRAM sa FS98031B8 MOSFET1 NOT GATEHY11P52B10MOSFET3 NOTGATE 26SRAM io_r FS98031B1 CMOSFET 3 NOT GATE2 NAND GATE HY11P52BCMOSFET NANDGATENOR GATENOT GATE1 27-28 ADDRESS PATHSRAM rdec4c FS98031BHY11P52B使1 NOT GATE3.1SW FS98031BHY11P52B4 2 CMOSFET 29SRAM cadd SRAM rdec4c 3.1SW 30SRAM cdec HY11P52BFS98031B使1 MOSFET2 NOT GATE32WRITE AND READ CONTROLSRAM clk_b2 使NOT GATENOR GATENAND GATE CMOSFET 342-35 3.SRAM89FS98031B沿SRAM9 FS98031BMOSFETLDO LV MOSFET FS98031BGoogleFS98031BGoogle1 348-362 89FS98031B沿SRAM 4.107 46107 1116107 347 107 9 30107 135 145 64調370 2 使使使使105 545 使 5.調使SRAM CELL FS98031BGoogle使 157 1 1 1.12271 使103 滿6 4 951 11157 1 1 157 1 5 7 362 2 955 302 1 15913 257 6 9 2.966 7 966 8 966 7 966 966 13966 13967 24967 27967 27278-279 2 1 7 6 157 1 1 調20276-279 96157 1 1 966 7 966 7 966 7 12157 1 1 3.姿4 966 7 8 107 5 17107000829288-1094 157 1 1 4.4 4 166 3438266-270 3438343536964 2 3738965 23使4 258 1 調 131 1 1 2 4 317 157 1 1 姿 258 3 2 108 2 27 108 2 27